switches - chip 7 7 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com discontinued product not recommended for new designs parameter frequency min. typ. max. units insertion loss dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 0.4 0.5 0.6 0.9 0.7 0.8 0.9 1. 4 db db db db isolation dc - 4.0 ghz 24 28 db return loss on state dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 22 16 14 11 db db db db input power for 1 db compression 0.5 - 1.0 ghz 0.5 - 4.0 ghz 25 23 30 29 dbm dbm input third order intercept (two-tone input power= +7 dbm each tone) 0.5 - 1.0 ghz 0.5 - 4.0 ghz 43 40 48 45 dbm dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) dc - 4.0 ghz 3 10 ns ns hmc240 general description features functional diagram the hmc240 is a low cost gaas mesfet spdt switch chip. covering dc to 4 ghz, this switch offers high isolation and low insertion loss. rf1 and rf2 are re ective shorts when off. the switch can oper- ate using either two negative control logic inputs of -5/0v or two positive control voltage logic inputs of 0/+5v. all data is tested with the chip in a 50 ohm test xture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. broadband performance: dc - 4 ghz low insertion loss: 0.5 db @ 2 ghz high iip3: +48 dbm small size: 0.70 x 0.70 x 0.13 mm electrical speci cations, t a = +25 c, with 0/-5v control or +5/0v control, 50 ohm system typical applications the hmc240 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space ? test instrumentation pads 3 & 7 are alternate a & b control inputs. gaas mmic spdt switch dc - 4 ghz v02.0910
switches - chip 7 7 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com discontinued product not recommended for new designs input third order intercept point return loss 0.1 and 1 db input compression point insertion los s vs. temperature isolation -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 rf1 rf2 isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 rfc rf1, rf2, on return loss (db) frequency (ghz) 30 35 40 45 50 55 60 +25 c +85 c -40 c 0.5 1 1.5 2 2.5 3 3.5 4 ip3 (dbm) frequency (ghz) 22 24 26 28 30 32 0.5 1 1.5 2 2.5 3 3.5 4 1.0 db compression point 0.1 db compression point p1db (dbm) frequency (ghz) hmc240 v02.0910 gaas mmic spdt switch dc - 4 ghz
switches - chip 7 7 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com discontinued product not recommended for new designs truth table: positive control voltage absolute maximum ratings control input control current signal path state a (vdc) b (vdc) ia (ua) ib (ua) rfc to rf1 rfc to rf2 0 +5 -50 50 on off +5 0 50 -50 off on rf input power v ctrl = 0/+5 (-5)v < 0.5 ghz 0.5 - 4 ghz +27 dbm +34 dbm control voltage range (a & b= 0/+5v) -0.2 to +10 vdc control voltage range (a & b= -5/0v) -10 to +0.2 vdc storage temperature -65 to +150 deg c operating temperature -55 to +85 deg c esd sensitivity (hbm) class 1a positive control voltage state bias condition low 0 vdc @ 10 ua high +3 vdc @ 10 ua to +8 vdc @ 70 ua control input voltage tolerences are 0.2 vdc. note: this part can be controlled with either positive or negative voltages per the above table. dc blocks are required at ports rfc, rf1 and rf2 if positive control voltage is used. truth table: negative control voltage control input control current signal path state a (vdc) b (vdc) ia (ua) ib (ua) rfc to rf1 rfc to rf2 -5 0 -50 50 on off 0-550-50offon negative control voltage state bias condition low -3 vdc @ 10 ua to -8 vdc @ 70 ua high 0 vdc @ 10 ua control input voltage tolerences are 0.2 vdc. electrostatic sensitive device observe handling precautions hmc240 v02.0910 gaas mmic spdt switch dc - 4 ghz
switches - chip 7 7 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com discontinued product not recommended for new designs outline drawing notes: 1. dimensions in inches [millimeters]. 2. die thickness is 0.005. 3. typical bond pad is 0.004 square. 4. typical bond pad spacing is 0.006 center to center. 5. bond pad metallization: gold. 6. pads 4 and 6 must be connected to rf/dc ground. pad descriptions pad number function description interface schematic 1, 7 a, a (alt.) see truth table and control voltage table. connect either pad 1 or pad 7 to control logic input. 2, 5, 8 rf1, rfc, rf2 these pads are dc coupled and matched to 50 ohms. blocking capacitors are required. 3, 9 b, b (alt.) see truth table and control voltage table. connect either pad 3 or pad 9 to control logic input. 4, 6 ac gnd must be connected to rf/dc ground. die packaging information [1] standard alternate gp-5 (gel-pak?) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc240 v02.0910 gaas mmic spdt switch dc - 4 ghz
switches - chip 7 7 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com discontinued product not recommended for new designs assembly diagram hmc240 v02.0910 gaas mmic spdt switch dc - 4 ghz
switches - chip 7 7 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com discontinued product not recommended for new designs handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). hmc240 v02.0910 gaas mmic spdt switch dc - 4 ghz
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